Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlxGa1-xAs heterostructures -: art. no. 195317

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (sigma(xy),sigma(xx)) are studied in the fractional quantum Hall regime for a two-dimensional (2D) electron system in GaAs/AlxGa1-xAs heterostructures. The flow lines are rather well-described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (sigma(xy),sigma(xx)) point determines a complete flow line.