期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 11, 页码 7919-7921出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.7919
关键词
nonpolar ZnO; M-plane sapphire; R-plane sapphire; MOVPE; growth temperature; VI/II ratio; c-axis
M-plane and A-plane ZnO films were grown on M-plane and R-plane sapphire substrates respectively. At high growth temperatures and/or VI/II ratios, ZnO grew along the direction perpendicular to the c-axis. On the other hand, at low growth temperatures and/or VI/II ratios, ZnO grew along the c-axis direction. A very smooth ZnO film was achieved on R-plane sapphire under a very low VI/II ratio condition. This was because the lateral growth was accelerated by a very strong tendency of growing along the c-axis. In contrast, on M-plane sapphire, C-plane ZnO nanorods tilted by 30 degrees from the normal of the surface were formed under this growth condition.
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