期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 11, 页码 781-783出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.857701
关键词
gallium nitride; high-electron mobility transistor (HEMT); high-frequency performance; millimeter-wave (mm-wave) devices; output power
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at V-DS = 30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed.
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