期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 66, 期 11, 页码 1978-1981出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2005.09.037
关键词
semiconductors; thin films; optical properties
In order to fabricate Cu2ZnSnS4 thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu2ZnSnS4 films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu2ZnSnS4 films with stoichiometric composition are obtained at the substrate temperature up to 400 degrees C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 degrees C. The Cu2ZnSnS4 film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu2ZnSnS4 film prepared in this experiment are suitable for fabricating a thin film solar cell. (c) 2005 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据