期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 34, 期 11, 页码 1363-1367出版社
SPRINGER
DOI: 10.1007/s11664-005-0191-5
关键词
electromigration; solder; interconnect; interface
Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 10(4) A/cm(2), Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder interface on the anode side, while a Sn-rich region formed at the cathode side of the electrical connection. The presence of the Bi layer inhibited further growth of Cu-Sn intermetallic phase at the interface by acting as a diffusion barrier to the reacting species.
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