期刊
OPTICS EXPRESS
卷 13, 期 23, 页码 9460-9464出版社
OPTICAL SOC AMER
DOI: 10.1364/OPEX.13.009460
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A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW. (c) 2005 Optical Society of America.
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