期刊
JOURNAL OF CRYSTAL GROWTH
卷 285, 期 1-2, 页码 249-260出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.08.033
关键词
growth models; heat transfer; recrystallization; liquid phase epitaxy; solid phase epitaxy; semiconducting silicon
Thin polycrystalline silicon films are attractive for the fabrication of active matrix liquid crystal displays. We propose the use of flash lamp annealing to crystallize amorphous silicon layers on glass substrates as a low-cost manufacturing route. In this process, amorphous silicon can be crystallized both by solid phase crystallization (SPC) and in the super lateral growth (SLG) regime. We present a thermal model which incorporates the phase transitions during annealing and we have shown that predictions from the model are in good agreement with experimental observations. In addition, the model is a valuable aid to optimizing the process conditions. (c) 2005 Elsevier B.V. All rights reserved.
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