A field-effect transistor consists of spin-polarized TTF-based donor

TTF-based organic donor molecule bearing stable organic radical moiety and long alkyl chains was synthesized and fabricated into a FET device structure. A fused solid film of the donor radical on a surface-oxidized silicon wafer with an interdigited electrode of 2 mu m gap as source and drain electrodes indicated FET characteristics although the observed hole mobility was very low. This is the first observation of a FET characteristic of an organic radical molecule. (c) 2005 Elsevier Ltd. All rights reserved.