The acoustic mismatch model (AMM) and the diffuse mismatch model (DMM) have been traditionally used to calculate the thermal boundary conductance of interfaces. In these calculations, the phonon dispersion relationship is usually approximated by a linear relationship (Debye approximation). This is accurate for wave vectors close to the zone center, but deviates significantly for wave vectors near the zone edges. Here, we present DMM calculations of the thermal conductance of Al-Si, Al-Ge, Cu-Si, and Cu-Ge interfaces by taking into account the full phonon dispersion relationship over the entire Brillouin zone obtained using the Born-von Karman model (BKM). The thermal boundary conductance thus calculated deviates significantly from DMM predictions obtained using the Debye model in all cases. (c) 2005 American Institute of Physics.
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