Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy -: art. no. 213103

The intrinsic p-type ZnO thin films were prepared by controlling the oxygen partial pressure during growth. The E-2 (high) mode at 432.2 cm(-1) appeared in the Raman spectrum of the film. The photoluminescence spectra taken at 77 K showed the emission band C in the violet region, which originated from zinc vacancy and varied in intensity in accordance with the quantity of the carrier concentration in the films. The N-doped p-type ZnO films were realized by N-2 plasma. The Raman spectrum showed the dominant A(1) (LO) mode at 580 cm(-1), that was the result of the host-lattice defects generated by N dopant rather than the N-related local vibration modes. (c) 2005 American Institute of Physics.