Schottky behavior at InN-GaN interface

In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metal/GaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here. (c) 2005 American Institute of Physics.