期刊
SCIENCE
卷 310, 期 5752, 页码 1304-1307出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1118798
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We describe the successful synthesis of modulation-doped silicon nanowires by achieving pure axial elongation without radial overcoating during the growth process. Scanning gate microscopy shows that the key properties of the modulated structures-including the number, size, and period of the differentially doped regions-are defined in a controllable manner during synthesis, and moreover, that feature sizes to less than 50 nanometers are possible. Electronic devices fabricated with designed modulation-doped nanowire structures demonstrate their potential for lithography-independent address decoders and tunable, coupled quantum dots in which changes in electronic properties are encoded by synthesis rather than created by conventional lithography-based techniques.
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