Discrete stress relaxations were found to be the source of low-temperature plastic flow in amorphous silicon (a-Si) as modeled by atomistic simulation using the Stillinger-Weber potential. These relaxations are triggered when a local yielding criterion is satisfied in a small cluster of atoms. The atomic rearrangements accompanying discrete stress relaxations are describable as autocatalytic avalanches of unit shearing events. Every such unit event centers on a clearly identifiable change in bond length between the two split peaks of the second nearest-neighbor shell in the radial distribution function of bulk a-Si in steady-state flow.
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