期刊
JOURNAL OF CRYSTAL GROWTH
卷 285, 期 3, 页码 300-311出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.08.047
关键词
AFM; RHEED; XRD; MBE; GaN; DMS
Here, we report the influence of the growth conditions for CrGaN grown with the N-polarity on sapphire (0 0 0 1) using radio frequency N plasma-assisted molecular beam epitaxy. Samples are grown under different Ga/N flux ratio of 0.65-1.0 at substrate temperatures of 650 and 700 degrees C. The Cr/Ga flux ratio is set to either 3% or 5%. These growth parameters allow to vary over a range of growth conditions from N-rich to Ga-rich. It is shown that the surface condition during growth influences the surface morphology and magnetic properties of CrGaN. In particular, we show that N-rich and metal-rich growth conditions result in room temperature ferromagnetism. Also discussed are the influence of Cr on the surface reconstruction and also the influence of annealing on the properties of the CrGaN film. (c) 2005 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据