期刊
SOLID STATE COMMUNICATIONS
卷 136, 期 11-12, 页码 591-594出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.09.029
关键词
semiconductors; optical properties
Luminescence and structural properties of GaSe1-xSx (0 <= x <= 1) series optical materials were characterized using photoluminescence (PL) and piezoreflectance (PzR) measurements at 300 K. From the comparison of PL and PzR spectra, the whole series GaSe1-xSx (0:! x:! 1) layers were confirmed to possess three different kinds of stacking phase when increasing the sulfur composition from x=0 to 1. Observing the peak positions of the PL spectra the light emissions of whole series GaSe1-xSx are shown to cover from red to blue visible region. The PL and PzR spectra of whole series GaSe1-xSx are analyzed. The structural variations in the layers are discussed. Based on the experimental results together with referring to previous band-structure calculations, a probable band scheme which indicating the transition assignments in the fundamental edge of GaSe1-xSx is proposed. (c) 2005 Elsevier Ltd. All rights reserved.
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