期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 30, 期 1-2, 页码 169-173出版社
ELSEVIER
DOI: 10.1016/j.physe.2005.08.005
关键词
silicon nanowire; electroless metal deposition; field emission; Raman spectra
Arrays of aligned silicon nanowire (SiNW) were synthesized on a silicon (100) substrate by self-assembling electroless nanoelectrochemistry. Compared with that of bulk crystal silicon, the first-order Raman peak of the silver cap-removed SiNW arrays shows a downshift and asymmetric broadening due to the phonon quaritum confinement effects, and intensity enhancement. Field electron emission from the SiNWs was also investigated. The turn-on field Was found to be about 12V/mu m at a current density of 0.01 mA/cm(2). These highly densified and ordered SiNW arrays can be expected to have favorable applications in vacuum electronic or optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.
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