期刊
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
卷 54, 期 6, 页码 2438-2445出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2005.858121
关键词
automated instrumentation; device simulation calibration; heterodyne interferometer; phase shift extraction; power density mapping; semiconductor device testing; thermal mapping; thermooptic effect
An automated scanning interferometer setup for time resolved measurement of thermal and free carrier distribution in semiconductor devices during short stress pulses is presented. The semiconductor device is probed via the thermal and free carrier induced changes in the semiconductor refractive index using a heterodyne interferometer. The setup integrates device stressing facilities, data acquisition and laser beam scanning. The time and space resolutions are 3 ns and 1.5 mu m, respectively. Different modes of interferometer configurations are discussed with respect to their application. A program for the extraction of the optical phase shift and calculation of the power dissipation density from the optical signal is also presented. The error due to measurement accuracy, as well as that introduced by the data post processing, is estimated.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据