期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 52, 期 6, 页码 2272-2275出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2005.860665
关键词
ALD; electron traps; ESR; gamma irradiation; hafnium oxide; high-k
We have identified the structure of three atomic scale defects which almost certainly play important roles in radiation damage in hafnium oxide based metal oxide silicon technology. We find that electron trapping centers dominate the HfO2 radiation response. We find two radiation induced trapped electron centers in the HfO2: an O-2(-) coupled to a hafnium ion and an HfO2 oxygen vacancy center which is likely both an electron trap and a hole trap. We find that, under some circumstances, Si/dielectric interface traps similar to the Si/SiO2 P-b centers are generated by irradiation. Our results show that there are very great atomic scale differences between radiation damage in conventional Si/SiO2 devices and the new Si/dielectric devices based upon HfO2.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据