期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 12, 页码 8435-8440出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.8435
关键词
AlGaN/GaN heterostructure; HEMT; surface morphology; electron velocity; intrinsic characteristic
The DC and RF characteristics of short-gate high-electron-mobility transistors (HEMTs) formed on four AlGaN/GaN wafers grown on sapphire substrates with different crystal quality have been investigated. Atomic force microscopy observation revealed many pits and trenches on the AlGaN surface, and the morphology of each sample was distinct. There were also differences in electron mobility and sheet carrier concentration. However, the gate length dependences of the measured transconductance and cut-off frequency were virtually the same. For a more detailed investigation. we subtracted the source resistance and AlGaN thickness contributions from measured DC and performed a delay time analysis for the RF characteristics. The results indicate that the intrinsic performance of HEMTs was independent of the surface morphology and that effective electron velocity ranged from 1.4 to 1.8 x 10(7) cm/s.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据