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Optimized hole injection with strong electron acceptors at organic-metal interfaces

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PHYSICAL REVIEW LETTERS
卷 95, 期 23, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.95.237601

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The energy-level alignment at interfaces between three electroactive conjugated organic materials and Au was systematically varied by adjusting the precoverage of the metal substrate with the electron acceptor tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Photoelectron spectroscopy revealed that electron transfer from Au to adsorbed F4-TCNQ was responsible for lowering the hole-injection barrier by as much as 1.2 eV. This novel interface modification scheme is independent of the charge transfer complex formation ability of the organic materials with the electron acceptor.

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