Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μm operation -: art. no. 231109

We report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55 mu m. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3 dB bandwidth under 2 V bias are close to 10, 18, 20, and 35 GHz for electrode spacings equal to 2000, 1000, 700, and 500 nm, respectively. (c) 2005 American Institute of Physics.