期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 124, 期 -, 页码 475-478出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2005.08.115
关键词
Si nanocrystal; photoluminescence (PL); X-ray diffraction (XRD); transmission electron microscopy (TEM)
Annealing of bulk SiO at temperatures above 850 degrees C leads to the formation of Si nanocrystals embedded in an amorphous silicon oxide matrix. Structural investigations by X-ray diffraction and transmission electron microscopy reveal a broad size distribution with a large abundance of isolated Si nanocrystals below 5 nm. Strong photoluminescence emission spectra in the near-infrared region were recorded at room temperature and at 100 K with three main emission bands observed. Higher annealing temperatures resulted in increased emission intensities without significant changes in the spectral shape of the photoluminescence emission. This method could be a promising way to produce Si-based photoluminescent materials in large quantities. (c) 2005 Published by Elsevier B.V.
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