Realization of 10 Tbit/in.2 memory density and subnanosecond domain switching time in ferroelectric data storage -: art. no. 232907

Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1 Tbit/in.(2) and subnanosecond (500 ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1 Tbit/in.(2) (c) 2005 American Institute of Physics.