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Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

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APPLIED PHYSICS LETTERS
卷 87, 期 25, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2149980

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We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2/Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm(2)/V s in the saturation regime, and a current on/off ratio of 10(3) in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

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