Voltage-controlled epitaxial strain in La0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)O3-PbTiO3(001) films -: art. no. 262502

Epitaxially grown La0.7Sr0.3MnO3 thin films show resistance modulations induced by the inverse piezoeffect of the employed Pb(Mg1/3Nb2/3)O-3-PbTiO3(001) (PMN-PT) substrates. The in-plane strain state of the films can continuously be tuned by application of a piezovoltage to PMN-PT. The lattice deformation of a PMN-PT(001) substrate was quantified by x-ray measurements under an electric field. Variation of in-plane lattice parameters by similar to 0.06% reversibly changes the resistance of the manganite films by up to 9% at 300 K and shifts the magnetic Curie temperature. Films of different thicknesses from 50 to 290 nm, offering different as-grown strain states, have been studied. (c) 2005 American Institute of Physics.