期刊
PHYSICAL REVIEW LETTERS
卷 95, 期 26, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.95.266403
关键词
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Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group approach. We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semiconductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.
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