The reactions of yttrium (Y) metal on silicon (Si) are investigated by x-ray photoelectron spectroscopy (XPS). Low-temperature annealing studies are performed to investigate the diffusion of Si. It is found that Si diffusion occurs even under low annealing temperatures of < 300 degrees C in an ultrahigh vacuum environment. This is attributed to the weakening of the Si-Si covalent bonds by metallic Y. XPS depth profiling of room-temperature-oxidized films revealed a possible oxygen-mediated pathway which allowed significant Si diffusion at room temperature for silicate formation. (c) 2006 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据