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Efficient spin injection into self-assembled quantum dots via LO-phonon-assisted resonant electron tunneling

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APPLIED PHYSICS LETTERS
卷 88, 期 2, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2164387

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Spin injection from a diluted magnetic semiconductor quantum well (DMS-QW) into self-assembled quantum dots (QDs) of CdSe is demonstrated via LO-phonon-assisted resonant electron tunneling. The experimental evidence for the spin injection is clearly shown by time-resolved circularly polarized exciton photoluminescence (PL) with the polarization degree up to 40% in QDs. In addition, a type II transition with the lifetime of 3.5 ns between electrons in the QDs and heavy holes in the DMS-QW is observed. These PL energies directly indicate that the electron tunneling is resonantly assisted by LO-phonon scattering, which realizes an efficient spin-injection process into QDs.

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