Structural and electrical properties of ZnO-doped 8 mol% yttria-stabilized zirconia

8 mol% Yttria-stabilized zirconia (8YSZ) powder was prepared by coprecipitation. ZnO (0.5, 1.0, 2.0, 5.0, 10.0 wt.%) was added to the YSZ powder through a mechanical mixing method. The densification, microstructure and electrical properties of the YSZ ceramics sintered at 1300 degrees C for 2 h, were investigated. It was found that the sinal I addition of ZnO was effective in reducing the sintering temperature and promoting the densification rate of the ceramics. The 5.0 wt.% ZnO-doped YSZ has similar to 96% relative density, as compared to similar to 89% relative density for the undoped sample. The total conductivity of 8YSZ was evidently increased by doping small amount of ZnO. For the 0.5 wt.% doped sample, the total conductivity of 2.89 x 10(-2) Omega(-1) cm(-1) and an increase of 120% in conductivity were observed at 800 degrees C, as compared to that of the undoped one. We also found that the grain boundary (GB) conductivity could be improved by small addition of ZnO. At intermediate temperature (similar to 300 degrees C), the maximum enhancement of GB conductivity was observed with 5.0 wt% ZnO dopant. Finally, the volume percentage of GB in the ceramics was estimated by the brick layer model. The possible mechanism related to the improved GB conduction of the YSZ due to the ZnO additions was discussed. (c) 2005 Elsevier B.V. All rights reserved.