期刊
ADVANCED MATERIALS
卷 18, 期 2, 页码 216-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200501716
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GaN nanowires with vastly different morphologies depending upon the growth direction are produced by direct nitridation and vapor transport of Gain disassociated ammonia. Nanowires grown homoepitaxially along the c-direction develop hexagonal-prism island morphologies (see Figure, left, and Cover), while wires grown along the a-direction form uniform, belt-shaped morphologies (Figure, right). A ballistic transport phenomenon for adatoms is proposed to explain the observed prismatic island morphologies.
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