期刊
PHYSICAL REVIEW LETTERS
卷 96, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.026804
关键词
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We show that electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that of paramagnetic atomic impurities and bulk semiconductors. Strain, dot geometry, and confinement energy modify the effective g factors, yet are insufficient to explain our results. We find that the dot's discrete energy spectrum quenches the orbital angular momentum, pushing the electron g factor towards 2, even when all the materials have negative bulk g factors. The approximate shape of a dot can be determined from measurements of the g factor asymmetry.
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