4.6 Article

Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901

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APPLIED PHYSICS LETTERS
卷 88, 期 4, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2162860

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We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.

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