期刊
VACUUM
卷 80, 期 5, 页码 400-405出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2005.07.003
关键词
optical band gap; amorphous semiconductors; chalcogenide glasses
The optical constants (absorption coefficient (alpha), refractive index (n), extinction coefficient (k), real and imaginary part of dielectric constant) have been studied for a-Se96-xTe4Agx (where x = 0, 4, 8, 12) thin films as a function of photon energy in the wavelength range (500-1000 nm). It has been found that the optical band gap increases while n and k decreases on incorporation of Ag in Se-Te system. The value of a and k increases, while the value of n decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level. A correlation between the optical band gap and electronegativity of the alloys indicates that the optical band gap increases with the decrease of electronegativity. (c) 2005 Elsevier Ltd. All rights reserved.
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