期刊
ACTA MATERIALIA
卷 54, 期 3, 页码 667-678出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2005.10.007
关键词
fracture; fatigue; semiconductor; micromechanical modeling
Polycrystalline silicon (polysilicon) fatigue specimens with micrometer-sized dimensions were fabricated and subjected to cyclic loading using an integrated electrostatic actuator. The fatigue effects were determined by comparing the single edge-notched beam monotonic bend strength measured after cyclic loading to the monotonic strength of '' virgin '' specimens that had received no cycling. Both strengthening and weakening were observed, depending on the levels of mean stress and fatigue stress amplitude during the cyclic loading. Monotonic loading with similar sub-critical stress levels had no effect. The physical mechanisms responsible for this behavior are discussed, and a model based on grain boundary plasticity is presented for the strengthening behavior. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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