期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 45, 期 4-7, 页码 L154-L157出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.L154
关键词
semipolar; GaN; nonpolar; sapphire
Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in-plane epitaxial relationship for (1013) GaN was [3032](GaN) parallel to [1210](sapphire) and [1210](GaN) parallel to [0001](sapphire). The in-plane epitaxial relationship for (1122) GaN was [1121](GaN) parallel to [0001](sapphire) and [1100](GaN) parallel to [1210](sapphire). The (1013) films were determined to have N-face sense polarity and a threading dislocation density of 9 x 10(8) cm(-2). The (1122) films have Ga-face sense polarity and have a threading dislocation density of 2 x 10(10) cm(-2). The basal plane stacking fault density was 2 x 10(5) cm(-1) for both orientations. The RMS roughness of the films was under 10 nm for a 5 x 5 mu m(2) area.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据