Characterization of planar semipolar gallium nitride films on sapphire substrates

Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in-plane epitaxial relationship for (1013) GaN was [3032](GaN) parallel to [1210](sapphire) and [1210](GaN) parallel to [0001](sapphire). The in-plane epitaxial relationship for (1122) GaN was [1121](GaN) parallel to [0001](sapphire) and [1100](GaN) parallel to [1210](sapphire). The (1013) films were determined to have N-face sense polarity and a threading dislocation density of 9 x 10(8) cm(-2). The (1122) films have Ga-face sense polarity and have a threading dislocation density of 2 x 10(10) cm(-2). The basal plane stacking fault density was 2 x 10(5) cm(-1) for both orientations. The RMS roughness of the films was under 10 nm for a 5 x 5 mu m(2) area.