期刊
OPTICAL MATERIALS
卷 28, 期 3, 页码 216-220出版社
ELSEVIER
DOI: 10.1016/j.optmat.2004.07.023
关键词
neutral loop plasma etching; LiNbO3; optical waveguide; C3F8 gas flow
A plasma dry etching technique has been applied to the fabrication of LiNbO3 optical waveguide with a ridge structure for broadband operation. The etching characteristics of a LiNbO3 single crystal have been investigated according to various ratios of Ar/C3F8 gas mixture. A Ni metal was used as a dry etching mask. The effects of a gas mixture ratio on etching profile angle, sidewall roughness and etching rate were also studied. The etching surface roughness was evaluated by atomic force microscopy (AFM). The etch rate and profile was observed by scanning electron microscopy (SEM). The optimum etching conditions, considering etch rate, profile and surface roughness, were obtained at the 20 sccm C3F8 gas flow. (c) 2005 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据