期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 35, 期 2, 页码 192-194出版社
SPRINGER
DOI: 10.1007/BF02692434
关键词
carbon nanotubes; chemical vapor deposition; aligned carbon nanotubes; nanotube towers; silicon substrates
A procedure for producing arrays of self-aligned carbon nanotubes (CNTs) using standard chemical vapor deposition (CVD) is reported. Using UV photolithography, silicon substrates are patterned with a thin layer of thermally evaporated iron as a CNT catalyst. The CVD synthesis was carried out over a small temperature range (700 degrees C-800 degrees C) using acetylene and methane gasses, producing aligned CNT towers. Scanning electron microscopy (SEM) analysis shows a relationship between CNT tower height and synthesis time. Additionally, results show that impurity particles dramatically effect CNT tower growth. These results indicate that aligned CNTs can be produced in a desired pattern with height control.
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