Diamond light emitting diode activated with Xe optical centers

A diamond light emitting diode (LED) activated with Xe-related optical centres is reported. The device was made on a high quality single crystal CVD diamond substrate using B+ and Li+ ion implantation, subsequent implantation by Xe+ ions and vacuum annealing to 1400 degrees C. A diode behaviour with the rectification ratio of 10(5) at 100 V was achieved. The electroluminescence (EL) of the device was found to concentrate at the B+ ion doped p-type area likely as a result of dominating injection of holes. The room temperature EL spectrum in the range 450 to 850 nm was presented by a narrow band emission of the zero phonon lines 812.5 nm and 794 nm of the Xe centre on a low emission background of the 575 nm nitrogen-related centre.