期刊
JOURNAL OF CRYSTAL GROWTH
卷 288, 期 1, 页码 44-48出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2005.12.045
关键词
annealing; MBE; GaNAs
High-resolution X-ray diffraction (HRXRD) and micro-Raman scattering probe have been used to study the effect of post-growth thermal annealing on GaNAs thin films grown on (001) GaAs substrates by solid-source molecular beam epitaxy assisted with a nitrogen radio-frequency plasma source. X-ray reciprocal space mapping shows slightly in-plane strain relaxation after annealing, however, the vertical lattice constant measured by HRXRD from the (004) atoms planes shows a shrinkage, which is contrary to both the relaxation of tensile strain and the decreasing of nitrogen due to out-diffusion. The ratio of Raman intensity between the nitrogen-localized vibration mode and the GaAs-like LO is found to increase as a function of annealing temperature, which provides evidence for the increase of substitutional N-As atoms at elevated temperatures. The anneal-induced vertical lattice shrinkage can be explained in term of the redistribution of nitrogen bonding configurations among the substitutional N-As. interstitial N-N, and the N-As complex. (c) 2005 Elsevier B.V. All rights reserved.
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