期刊
ADVANCED MATERIALS
卷 18, 期 3, 页码 334-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200501949
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- Engineering and Physical Sciences Research Council [GR/S85764/01] Funding Source: researchfish
An inorganic/organic hybrid semiconductor heterostructure is reported, in which an InGaN quantum well is non-radiatively coupled to a semiconducting polymer overlayer (see Figure). This architecture has the potential to take advantage of the complementary attributes of the two types of semiconductor that it contains, and may lead to devices with highly efficient emission across the entire visible spectrum.
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