Photoluminescence behaviors of Eu-doped GdVO4 thin film phosphors grown by pulsed laser ablation

GdVO4:Eu3+ thin films have been grown on Si (100) substrates using pulsed laser deposition. The films deposited at the different conditions show different microstructural and luminescent characteristics. The crystallinity, surface morphology and photoluminescence of the films are highly dependent on the deposition conditions, oxygen pressure and substrate temperature. The photoluminescence results obtained from GdVO4:Eu3+ films grown under optimized conditions have indicated that Si (100) is promising substrate for the growth of high quality GdVO4:Eu3+ film phosphor. In particular, the surface morphology and photoluminescence of GdVO4:Eu3+ films show very similar behavior as a function of oxygen pressure. The emitted radiation was dominated by the red emission peak at 620 mn and this phosphor is promising for applications in flat panel displays. (c) 2005 Elsevier B.V. All rights reserved.