Low-temperature solvothermal route to 2H-SiC nanoflakes

Silicon carbide nanoflakes have been synthesized through a one-step solvothermal route involving reaction of SiCl4 and CaC2 at 180 degrees C for the first time. According to x-ray powder diffraction, infrared, and Raman spectra analysis, the obtained nanoflakes possess a crystalline structure of 2H-SiC. Electron microscopy investigations show that the nanoflakes have typical diameters of 200-500 nm, thickness of similar to 15 nm, and grow along the [001] direction. The nanoflakes exhibit a new photoluminescence peak at similar to 314 nm, which is ascribed to defects in the SiOx. The possible growth mechanism of the nanoflakes is discussed.