The hole injection of the organic light-emitting diodes with Al as a reflective anode for top-emitting devices was improved by using C60 as a thin buffer layer between Al and a hole transport layer. The driving voltage of the devices with C60 buffer layer was 5.5 V compared with 11 V for the devices without C60 buffer layer. The decrease of interfacial energy barrier by interface dipole formation between Al and C60 contributed to the low driving voltage of the devices. (c) 2006 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据