Metal-ferroelectric-insulator-semiconductor capacitors with Pb(Zr-0.53,Ti-0.47)O-3 (PZT) ferroelectric layer and dysprosium oxide (Dy2O3) insulator layer were fabricated and characterized. The measured memory window of 0.86 V was close to the theoretical value Delta W approximate to 2d(f)E(c)approximate to 0.78 V at a sweep voltage of 8 V. The size of the memory window as a function of PZT film thickness was discussed. The C-V flatband voltage shift (Delta V-FB) as function of charge injection was also studied. An energy band diagram of the Al/PZT/Dy2O3/p-Si system was proposed to explain the memory window and flatband voltage shift. The charge injection is mainly due to electrons.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据