High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators -: art. no. 082104

The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n-type semiconductor N,N-'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN(2)) are described. The mobility, threshold voltage, subthreshold swing, and I-on/I-off ratio(V-DS=40 V, V-G=0 similar to 40 V) are 0.14 cm(2)/V s, 1.6 V, 2.0 V/decade, and 1.2x10(3), respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8CN(2), and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 mu s. (c) 2006 American Institute of Physics.