期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 39, 期 4, 页码 631-634出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/39/4/006
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The structure, luminescence and etching kinetics for porous silicon stain-etched at different temperatures are studied. The results reveal that for temperatures below 10 degrees C and for short etching times, a novel anisotropic structure based on surface roughness preferentially oriented in the (100) direction is observed. At temperatures higher than 10 degrees C or large etching times, typical macropores and mesopores with non-preferential pore wall orientation are detected. The luminescence spectra of the samples with preferential surface roughness orientation are red-shifted with respect to the samples with typical isotropic orientation. The results are interpreted in terms of average etching rates and pore growth.
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