Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes

Homoepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors with ITO, TiW and Ni/Au contact electrodes were fabricated. It was found that barrier heights for electrons were 0.66, 0.695 and 0.715 eV for ITO, TiW and Ni/Au on the homoepitaxial ZnSe, respectively. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au contact electrodes were 120, 50.6 and 28.1 mA/W, which corresponds to quantum efficiencies of 33.5, 14 and 8%, respectively. For a given bandwidth of 100 Hz and a given bias of I V. it was found that the corresponding noise equivalent power of our homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au electrodes were 8.14 x 10(-13), 1.73 x 10(-12) and 9.25 x 10(-13) W, respectively. Furthermore, it was found that the corresponding D* were 8.7 x 10(11), 4.09 x 10(11) and 7.65 x 10(11) cm Hz(0.5) W(-1), respectively. (c) 2005 Elsevier B.V. All rights reserved.