Simultaneous analysis of double-crystal X-ray rocking curves from a set of crystallographic planes

A technique of simultaneous analysis of rocking curves from different crystallographic planes of multilayer semiconductor heterostructures is developed and implemented. By the example of the GaAs-InxGa1-xAs/GaAs(001) heterostructure with a quantum well and the rocking curves from the (004), (113), and (115) planes, it is demonstrated that simultaneous analysis makes it possible to derive both more reliable and more exhaustive information on the thickness, strain, and degree of amorphization of individual layers and interfaces in this heterostructure. The procedure developed can be used effectively to analyze arbitrary experimental data sets obtained by different X-ray methods sensitive to the general set of structural parameters.