期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 42, 期 3-4, 页码 397-403出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2006.871067
关键词
avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes
资金
- Engineering and Physical Sciences Research Council [GR/R65534/01] Funding Source: researchfish
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 urn. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
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