Enhancement of weak anti-localization signatures in the magneto-resistance of bismuth anti-dot thin films

Anti-dot array thin films of bismuth were prepared by the e-beam deposition of this semi-metal on nano-porous substrates. The magneto-resistance measurements of bismuth thin films deposited under identical conditions on various substrates displayed signatures from both classical magneto-resistance and weak anti-localization effects. The relative intensity of the two effects could be altered by the choice of the substrate, with the anti-dot array morphology suppressing the classical magneto-resistance, and enhancing the weak anti-localization contribution to the measured magneto-resistance. As a result, the weak anti-localization effect can be traced to higher magnetic field strengths and higher temperatures than is possible in non-patterned films, improving the accuracy of the parameters extracted from the data.