期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 82, 期 3, 页码 471-474出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-005-3383-1
关键词
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Anti-dot array thin films of bismuth were prepared by the e-beam deposition of this semi-metal on nano-porous substrates. The magneto-resistance measurements of bismuth thin films deposited under identical conditions on various substrates displayed signatures from both classical magneto-resistance and weak anti-localization effects. The relative intensity of the two effects could be altered by the choice of the substrate, with the anti-dot array morphology suppressing the classical magneto-resistance, and enhancing the weak anti-localization contribution to the measured magneto-resistance. As a result, the weak anti-localization effect can be traced to higher magnetic field strengths and higher temperatures than is possible in non-patterned films, improving the accuracy of the parameters extracted from the data.
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